Description: Brand: Infineon Technologies Model: IRFP4332PBF Condition: New Quantity: 2 Product Description: The IRFP4332PBF is an N-Channel Power MOSFET with the following specifications:Voltage Rating: 250V (Drain-to-Source)Current Rating: 57A (Continuous), 230A (Pulsed)On-Resistance: 29 mΩ typical at VGS = 10V, ID = 35AGate Charge: 99 nC typicalPackage: TO-247ACPower Dissipation: 300W at TC = 25°COperating Junction Temperature: -40°C to 175°CGate-to-Source Voltage (VGS): ±30VTotal Capacitance: Input 5860 pF, Output 530 pF, Reverse Transfer 130 pFThermal Resistance: Junction-to-Case 0.42°C/WCompliance: RoHS3 compliant This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. Also used in high-efficiency switching applications, including power supplies, inverters, and motor control circuits.
Price: 13.49 USD
Location: Cedar Rapids, Iowa
End Time: 2024-11-11T19:25:15.000Z
Shipping Cost: 4.99 USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money back or replacement (buyer's choice)
Mounting Style: Through-Hole
Configuration: Single
Number of Elements per Chip: 1
Package/Case: TO-247AC
MPN: IRFP4332PBF
Transistor Category: Power Transistor
Minimum Operating Temperature: -40 °C (-40 °F)
Brand: Infineon
Type: N-Channel Enhancement Mode MOSFET
Unit Type: Unit
Maximum DC Collector Current: 57A
Number of Pins: 3
Packaging: Single
Maximum Operating Temperature: 175 °C (347 °F)
Unit Quantity: 2